BUK436W-200B - PowerMOS transistor

NXP Semiconductors

General Description

N-channel enhancement mode field-effect power transistor in a plastic envelope.

The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.

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BUK436W-200B powermos transistor by NXP Semiconductors - Datasheet Preview

Datasheet Details

Part number	BUK436W-200B
Manufacturer	NXP Semiconductors
File Size	71.28 KB
Description	PowerMOS transistor
Datasheet	BUK436W-200B Datasheet

Full PDF Text Transcription for BUK436W-200B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BUK436W-200B. For precise diagrams, and layout, please refer to the original PDF.

Philips Semiconductors Product Specification PowerMOS transistor BUK436W-200A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic ...

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N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON) PARAMETER BUK436 Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX. -200A 200 19 125 0.16 MAX. -200B 200 17 125 0.

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