BDX13 transistor equivalent, npn transistor.
*Designed for general-purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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PARAME.
*Excellent Safe Operating Area
*DC Current Gain-hFE=15-60@IC = 8A
*Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0 V(Max)@ IC = 4A
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and relia.
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