BDX11 transistor equivalent, npn transistor.
*Designed for general-purpose power amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V (Min)
*High Current Capability
*Wide area of safe operation
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICAT.
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