BDX12 transistor equivalent, npn transistor.
*Designed for application in industrial and commercial
equipment including high fidelity audio amplifier,series and .
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V (Min)
*Excellent Safe Operating Area
*Low Collector-Emitter Saturation Voltage
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance
and reliable.
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