BD751C transistor equivalent, npn transistor.
*Designed for high voltage and high power amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMET.
* Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min)- BD751B = 130V(Min)- BD751C
*High Power Dissipation
*Complement to Type BD750B/750C
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
A.
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