BD750 transistors equivalent, silicon pnp power transistors.
*Designed for high voltage and high power amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMET.
* Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -90V(Min)- BD750 = -120V(Min)- BD750A
*High Power Dissipation
*Complement to Type BD751/751A
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
AP.
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