BD751 transistors equivalent, silicon npn power transistors.
*Designed for high voltage and high power amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMET.
* Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 90V(Min)- BD751 = 120V(Min)- BD751A
*High Power Dissipation
*Complement to Type BD750/750A
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPL.
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