BD539B transistor equivalent, npn transistor.
*Designed for use in medium power linear and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARA.
*DC Current Gain -
: hFE = 40(Min.)@ IC= 0.5A
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
*Complement to Type BD540B
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
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