BD539 transistor equivalent, npn transistor.
*Designed for use in medium power linear and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARA.
*DC Current Gain -
: hFE = 40(Min.)@ IC= 0.5A
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 40V(Min)
*Complement to Type BD540
APPLICATIONS
*Designed for use in medium power linear and switching
applications.
ABSOLUTE MAXIMUM RA.
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