2SD641 transistor equivalent, npn transistor.
*High voltage switching applications.
*High power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYM.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V (Min)
*Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V (Max.)@ IC= 10A
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
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