Datasheet Details
| Part number | 2SD649 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.44 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
 2SD649 Datasheet
|
|
|
| Part number | 2SD649 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.44 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
2SD649 Datasheet
|
|
|
|
·High Breakdown Voltage: VCBO= 1500V (Min) ·High Reliability APPLICATIONS ·Designed for line-operated horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCES Collector-Emitter Voltage VEBO Emitter-Base Voltage C www.DataSheet4U.com I Collector Current- Continuous w w s c s i .
w 1500 1500 5 3 5 35 V V n c .
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor.
| Part Number | Description |
|---|---|
| 2SD692 | Silicon NPN Darlingtion Power Transistor |
| 2SD103 | Silicon NPN Power Transistors |
| 2SD1032 | Silicon NPN Power Transistor |
| 2SD1044 | Silicon NPN Darlington Power Transistor |
| 2SD1071 | Silicon NPN Transistor |
| 2SD1113 | Silicon NPN Power Transistor |
| 2SD1117 | Silicon NPN Power Transistor |
| 2SD1118 | Silicon NPN Power Transistor |
| 2SD1126 | Silicon NPN Darlington Power Transistor |
| 2SD1127 | Power Transistor |