2SD2222 transistor equivalent, npn transistor.
*Designed for power amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collecto.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 160V(Min)
*High DC Current Gain-
: hFE= 3500( Min.) @(IC= 7A, VCE= 5V)
*Low Collector Saturation Voltage-
: VCE(sat)= 3.0V(Max)@ (IC= 7A, IB= 7mA)
*Complement to Type 2SB1470
*Mini.
Image gallery
TAGS
Download (Size : 200.64KB)