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2SD2204
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2204
High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications
Unit: mm
• •
High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 1.5 A) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1.5 A)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics S Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C DC I Pulse I ymbol VCBO VCEO VEBO
C CP
Rating 65 ± 10 65 ± 10 7 4 6 0.5 2.0 25
Unit V V V A A W °C
IB PC Tj 150 Tstg
JEDEC JEITA TOSHIBA
― SC-67 2-10R1A
−55 to 150
°C
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g.
2SD2204 Datasheet
