2SD1888 transistor equivalent, npn transistor.
*Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
*High DC Current Gain-
: hFE= 2000(Min)@ (VCE= 3V, IC= 2A)
*Complement to Type 2SB1339
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
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