2SD1417 transistor equivalent, npn transistor.
*Power amplifier and switching applications
*Hammer drive,pulse motor drive applications
ABSOLUTE MAXIMUM RATIN.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
*High DC Current Gain-
: hFE= 2000(Min)@ (VCE= 3V, IC= 3A)
*Low Collector Saturation Voltage
*Complement to Type 2SB1022
*Minimum Lot-to-Lot variations for robust device
p.
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