2SD1416 transistor equivalent, silicon npn darlington power transistor.
*Hammer driver,pulse motor drive applications.
*High power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
*Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 3A
*High DC Current Gain
: hFE= 2000(Min) @ IC= 3A, VCE= 3V
*Complement to Type 2SB1021
*Minimum Lot-to-L.
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