2SD1410 transistor equivalent, silicon npn darlington power transistor.
*Igniter applications
*High voltage switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
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*Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 250V(Min)
*Collector-Emitter Saturation Voltage-
:V CE(sat)= 2.0V(Max) @IC= 4A
*High DC Current Gain
: hFE= 2000(Min) @ IC= 2A, VCE= 2V
*Minimum Lot-to-Lot variations for robust devi.
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