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2SC3675 - NPN Transistor

Description

Low Collector Saturation Voltage High breakdown voltage Small Cob Good Linearity of hFE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage amplifier High-voltage switching applications Dynamis focus ap

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3675 DESCRIPTION ·Low Collector Saturation Voltage ·High breakdown voltage ·Small Cob ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage amplifier ·High-voltage switching applications ·Dynamis focus applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 900 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.1 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.3 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.
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