Low Collector Saturation Voltage
High breakdown voltage
Good Linearity of hFE
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
High voltage amplifier
High-voltage switching applications
Dyna
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC3677
DESCRIPTION ·Low Collector Saturation Voltage ·High breakdown voltage ·Good Linearity of hFE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High voltage amplifier ·High-voltage switching applications ·Dynamis focus applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Pulse
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
6
A
25
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.
2SC3677 Datasheet
