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2SC3675 - NPN Transistor

Key Features

  • High breakdown voltage (VCEO min=900V).
  • Small Cob (Cob typ=2.8pF).
  • Wide ASO (Adoption of MBIT process).
  • High reliability (Adoption of HVP process). JEDEC : TO-220AB EIAJ : SC46 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN1800E NPN Triple Diffused Planar Silicon Transistor 2SC3675 900V/100mA High-Voltage Amplifier High-Voltage Switching Applications Applications · High voltage amplifiers. · High-voltage switching applications. · Dynamic focus applications. Package Dimensions unit:mm 2010C [2SC3675] Features · High breakdown voltage (VCEO min=900V). · Small Cob (Cob typ=2.8pF). · Wide ASO (Adoption of MBIT process). · High reliability (Adoption of HVP process).