2SB781 transistor equivalent, pnp transistor.
*Designed for use in general purpose power amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
S.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -50V(Min)
*Good Linearity of hFE
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*.
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