2SB616 transistor equivalent, pnp transistor.
*Designed for power amplifiers applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
.
*Collector-Emitter BreakdownVoltage-
: V(BR)CEO= -100V(Min.)
*Low Collector Saturation Voltage-
: VCE(sat)= -1.0(Max.) @IC= -2A
*With TO-3PN package
*Complement to Type 2SD586
*Minimum Lot-to-Lot variations for robust device
perfo.
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