*Designed for high power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER .

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -250V(Min)
*High Power Dissipation- : PC= 150W(Max)@TC=25℃
*High Current Capability
*Complement to Type 2SD583
*Minimum Lot-to-Lot variations for robust device performance and reli.

2SB611

2SB612

2SB616

2SB617

2SB617A

2SB600

2SB601

2SB604

2SB605

2SB608

2SB609

2SB621

2SB621A

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