2SB611 transistor equivalent, silicon pnp power transistor.
*Designed for general-purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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PARAME.
*Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -110V(Min)
*Low Collector Saturation Voltage-
: VCE(sat)= -1.0V(Max.) @IC= -5A
*Wide area of safe operation
*Minimum Lot-to-Lot variations for robust device
performance and reliable .
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