2SB1075 transistor equivalent, pnp transistor.
*Designed for AF output amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V.
*High Collector Current -IC= -2A
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -40V(Min.)
*Good Linearity of hFE
*Low Collector Saturation Voltage
: VCE(sat)= -1.0V(Max.)@ IC= -3A
*Minimum Lot-to-Lot variations for robust devi.
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