2SA762 transistor equivalent, pnp transistor.
*Designed for general purpose power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VAL.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -110V(Min)
*Low Collector Saturation Voltage
*Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS
*Designed for general purpose power ampl.
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