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2N3226 - NPN Transistor

Description

Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% test

and reliable operation.

Designed for power amplifier and switching circuits applications ABSOLUTE MAXIMUM RATINGS(Ta=25

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% test ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for power amplifier and switching circuits applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 35 V VCER Collector-Emitter Voltage 35 V VCEO Collector-Emitter Voltage 35 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A PC Collector Power Dissipation@TC=25℃ 75 W TJ, Tstg Operating and Storage Junction Temperature Range -65~+150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.
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