Download 2N3055 Datasheet PDF
Inchange Semiconductor
2N3055
DESCRIPTION - Excellent Safe Operating Area - DC Current Gain-h FE=20-70@IC = 4A - Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A - plement to Type MJ2955 - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCER Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current-Continuous Base Current Collector Power Dissipation@TC=25℃ TJ, Tstg Operating and Storage Junction Temperature Range -65~+150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to...