2N3055B
DESCRIPTION
- Excellent Safe Operating Area
- DC Current Gain-h FE=70-140 @IC = 4A
- Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.1 V(Max)@ IC = 4A
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for general-purpose switching and amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Base Current
Collector Power Dissipation@TC=25℃
TJ, Tstg
Operating and Storage Junction Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 1.52 ℃/W
2N3055B isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power...
