16NF06 mosfet equivalent, n-channel mosfet.
*high packing density for low on-resistance，rugged avalanche
characteristics and less critical alignment steps there.
*Drain Current ID= 16A@ TC=25℃
*Static Drain-Source On-Resistance
: RDS(on) = 100mΩ(Max)
*Fast Switching Speed
*Minimum Lot-to-Lot variations for robust device performance
and reliable operation
*APPLICATIONS
*high packing de.
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