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16N25E - MTB16N25E

16N25E Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB16N25E/D Designer's TMOS E-FET .™ High Energy Power FET D 2 PAK for Surface Mount .

16N25E Features

* istance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize comm

16N25E Applications

* that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced TMOS E
* FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain
* to
* source diode with a

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Datasheet Details

Part number
16N25E
Manufacturer
Motorola
File Size
198.77 KB
Datasheet
16N25E_Motorola.pdf
Description
MTB16N25E

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MTB16N25E Motorola
Motorola 16N25E-like datasheet