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Unisonic Technologies

16N50 Datasheet Preview

16N50 Datasheet

N-CHANNEL POWER MOSFET

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UNISONIC TECHNOLOGIES CO., LTD
16N50
16A, 500V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 16N50 is a N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with planar stripe
and DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC 16N50 is generally applied in high efficiency switch
mode power supplies, active power factor correction and electronic
lamp ballasts based on half bridge topology.
FEATURES
* RDS(ON) < 0.38@ VGS=10V, ID=8A
* High Switching Speed
* 100% Avalanche Tested
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
16N50L-TF1-T
16N50G-TF1-T
16N50L-TF2-T
16N50G-TF2-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1
TO-220F2
Pin Assignment
123
GDS
GDS
Packing
Tube
Tube
MARKING
www.unisonic.com.tw
Copyright © 2017 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-532.H




Unisonic Technologies

16N50 Datasheet Preview

16N50 Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

16N50
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
500
V
Gate-Source Voltage
Drain Current
Continuous
Pulsed (Note 2)
Avalanche Current (Note 2)
VGSS
ID
IDM
IAR
±30
16
64
12.9
V
A
A
A
Avalanche Energy
Single Pulsed (Note 3)
Peak Diode Recovery dv/dt (Note 4)
EAS
dv/dt
832 mJ
3.8 V/ns
Power Dissipation
Junction Temperature
PD 38 W
TJ
+150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature.
3. L=10mH, IAS=12.9A, VDD=50V, RG=25 , Starting TJ = 25°C
4. ISD16A, di/dt200A/μs, VDDBVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
62.5
3.29
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
BVDSS
IDSS
IGSS
ID=250µA, VGS=0V
VDS=500V, VGS=0V
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=8A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge (Note 1)
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time (Note 1)
Rise Time
Turn-OFF Delay Time
Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VDS=50V, VGS=10V, ID=1.3A,
ID=100µA (Note 1, 2)
VDS=30V, VGS=10V, ID=0.5A,
RG=25(Note 1, 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage (Note 1)
VSD IS=16A, VGS=0V
Body Diode Reverse Recovery Time (Note 1)
Body Diode Reverse Recovery Charge
trr IS=16A, VGS=0V,
Qrr dIF/dt=100A/µs
Notes: 1. Pulse Test: Pulse width 300µs, Duty cycle 2%.
2. Essentially independent of operating ambient temperature.
MIN TYP MAX UNIT
500 V
1 µA
+100 nA
-100 nA
2.0 4.0 V
0.38
2330
260
29
pF
pF
pF
170 nC
16 nC
35.5 nC
114 ns
121 ns
590 ns
185 ns
16
64
1.4
375
5.25
A
A
V
nS
μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-532.H


Part Number 16N50
Description N-CHANNEL POWER MOSFET
Maker Unisonic Technologies
Total Page 6 Pages
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