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HY5S2B6DLF-BE Datasheet, Hynix Semiconductor

HY5S2B6DLF-BE dram equivalent, 4banks x 2m x 16bits synchronous dram.

HY5S2B6DLF-BE Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 791.81KB)

HY5S2B6DLF-BE Datasheet
HY5S2B6DLF-BE Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 791.81KB)

HY5S2B6DLF-BE Datasheet

Features and benefits

Standard SDR Protocol Internal 4bank operation
* Voltage : VDD = 1.8V, VDDQ = 1.8V
* LVCMOS compatible I/O Interface
* Low Voltage interface to reduce I/O pow.

Description

and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.3 / Feb. 2005 1 1HY5S2B6DLF(P)-xE 4Banks x 2M x 16bits Synchronous DRAM DESCRIPTION.

Image gallery

HY5S2B6DLF-BE Page 1 HY5S2B6DLF-BE Page 2 HY5S2B6DLF-BE Page 3

TAGS

HY5S2B6DLF-BE
4Banks
16bits
Synchronous
DRAM
Hynix Semiconductor

Manufacturer


Hynix Semiconductor

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