HY57V281620FSTP datasheet, (8mx16bit) equivalent, Hynix Semiconductor

HY57V281620FSTP (8mx16bit) equivalent, synchronous dram memory 128mbit (8mx16bit).

Features and benefits

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* Voltage: VDD, VDDQ 3.3V supply voltage All device pins are compatible with LVTTL interface 54 Pin TSOPII (Lead Free Package) All inputs and output.

Application

which require wide data I/O and high bandwidth. HY57V281620F(L/S)T(P) series is organized as 4banks of 2,097,152 x 16. H.

Description

and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.2 / Oct. 2007 1 Synchronous DRAM Memory 128Mbit (8Mx16bit) HY57V281620F(L/S)TP Seri.

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