HY57V281620ELTP datasheet, 16bit) equivalent, Hynix Semiconductor

HY57V281620ELTP 16bit) equivalent, synchronous dram memory 128mbit (8m x 16bit).

Features and benefits

* Voltage: VDD, VDDQ 3.3V supply voltage
* 4096 Refresh cycles / 64ms
* All device pins are compatible with LVTTL interface
* Programmable Burst Length .

Application

which require wide data I/O and high bandwidth. HY57V281620E(L/S)T(P) series is organized as 4banks of 2,097,152 x 16. H.

Description

and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.4 / Aug. 2005 1 Synchronous DRAM Memory 128Mbit (8Mx16bit) HY57V281620E(L/S)T(P).

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