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HY57V281620ET - Synchronous DRAM Memory 128Mbit (8M x 16bit)

Download the HY57V281620ET datasheet PDF. This datasheet also covers the HY57V281620ELT variant, as both devices belong to the same synchronous dram memory 128mbit (8m x 16bit) family and are provided as variant models within a single manufacturer datasheet.

Description

and is subject to change without notice.

responsibility for use of circuits described.

No patent licenses are implied.

Features

  • Voltage: VDD, VDDQ 3.3V supply voltage.
  • 4096 Refresh cycles / 64ms.
  • All device pins are compatible with LVTTL interface.
  • Programmable Burst Length and Burst Type.
  • 54 Pin TSOPII (Lead or Lead Free Package) - 1, 2, 4, 8 or full page for Sequential Burst.
  • All inputs and outputs referenced to positive edge of system clock.
  • Data mask function by UDQM, LDQM.
  • Internal four banks operation.
  • Auto refresh and self refre.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HY57V281620ELT_HynixSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY57V281620ET
Manufacturer SK Hynix
File Size 120.33 KB
Description Synchronous DRAM Memory 128Mbit (8M x 16bit)
Datasheet download datasheet HY57V281620ET Datasheet

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Other Datasheets by SK Hynix

Part Number Description
HY57V281620ETP Synchronous DRAM Memory 128Mbit (8M x 16bit)
HY57V281620ELT Synchronous DRAM Memory
HY57V281620ELTP Synchronous DRAM Memory 128Mbit (8M x 16bit)
HY57V281620EST Synchronous DRAM Memory 128Mbit (8M x 16bit)
HY57V281620A 4 Banks x 2M x 16bits Synchronous DRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No. History 1.0 First Version Release 1.1 1. Corrected PIN ASSIGNMENT A12 to NC 1.2 1. Changed IDD3P and IDD3PS 3mA to 5mA 2. Added Industrial Temperature (-40oC to 85oC) 1.3 Changed tOH(Only Symbol ‘H’): 2.5ns -> 2.7ns 1.4 Add Super Low Power-> IDD6: 500uA Draft Date Dec. 2004 Jan. 2005 Feb. 2005 Apr. 2005 Aug. 2005 Remark This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.4 / Aug.