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HGB049N10S , HGP049N10S
P-1
Feature ◇ High Speed Power Switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free
Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ Power Tools ◇ UPS ◇ Motor Control
TO-263
100V N-Ch Power MOSFET
VDS RDS(on),typ TO-263 RDS(on),typ TO-220 ID (Sillicon Limited) ID (Package Limited)
100 V 3.9 mΩ 4.