HGP022N04B-G Datasheet | CR Micro

Description ： HGP022N04B-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is VDSS ID (Silicon Limited) ID(Package Limited) PD RDS(ON)Typ suitable for use as a load switch and PWM applications. The package form is TO-220AB, which accords with the Ro HS standard. Features ： l Fast Switching l Low ON Resistance(Rdson≤2.2mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free Applications： Power switch circuit of adaptor and charger. 40 V 200 A 120 A 150.6 W 1.7 mΩ Absolute（Tj= 25℃ unless otherwise specified） Symbol VDSS IDMa1 VGS EAS a2 PD TJ，Tstg TL Parameter Drain-to-Source Voltage Continuous Drain Current TC = 25 °C(Silicon Limited) Continuous Drain Current Tc= 25°C(Package Limited) a1 Continuous Drain Current TC = 100°C(Package Limited) a1 Pulsed Drain Current...