HGP026N03A
Description
：
HGP026N03A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as A load switch and PWM applications. the package form is TO-220AB, which accords with the Ro HS standard.
Features
：
- Fast Switching
- Low ON Resistance
- Low Gate Charge
- Low Reverse transfer capacitances
- 100% Single Pulse avalanche energy Test
VDSS ID（Silicon limited） ID（Package limited） PD RDS(ON)Typ
Applications：
Power switch circuit of adaptor and charger.
®
30 V
170 A
104.1 W
2 mΩ
Absolute（Tj= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
Drain-to-Source Voltage
Continuous Drain Current TC = 25 °C（Silicon limited）
Continuous Drain Current TC = 25 °C (Package limited) a1
IDM VGS EAS a2
Continuous Drain Current TC = 100 °C (Package limited) Pulsed Drain Current TC = 25 °C Gate-to-Source Voltage...
