CS6N60A4TY mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l Low ON Resistance(Rdson≤1.7Ω) l Low Gate Charge (Typical Data: 17nC) l Low Reverse transfer capacitances(Typical: 2.7pF) l 100% Single Pulse avalanche.
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
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CS6N60 A4TY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw.
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