CS6N60A3HDY mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 25nC) l Low Reverse transfer capacitances(Typical: 10pF) l 100% Single Pulse avalanche energy.
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
.
CS6N60 A3HDY, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various po.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 230.20KB)