CS6N60A4D mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 25nC) l Low Reverse transfer capacitances(Typical: 10pF) l 100% Single Pulse avalanche energy.
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
.
CS6N60 A4D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD(TC=25℃) RDS(ON)Typ
600 6 95 1.0
performance and enhance the avalanche energy. T.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 351.27KB)