l Fast Switching l Low ON Resistance(Rdson≤5.5Ω) l Low Gate Charge (Typical Data:16nC) l Low Reverse transfer capacitances(Typical:6.5pF) l 100% Single Pulse avalanche e.

Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rat.

CS3N90 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance VDSS ID PD(TC=25℃) RDS(ON)Typ 900 3 80 5.0 the avalanche energy. Th.

CS3N90A3H

CS3N90A4H

CS3N90FA9H

CS3N06AE-G

CS3N06AS-G

CS3N06AS1-G

CS3N20A23H

CS3N20A3H

CS3N20A4H

CS3N20ATH

CS3N25

CS3N30B23H

CS3N40A23

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