l Fast Switching l Low ON Resistance(Rdson≤5.5Ω) l Low Gate Charge (Typical Data: 16nC) l Low Reverse transfer capacitances(Typical: 5pF) l 100% Single Pulse avalanche e.

Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID .

CS3N90 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi.

CS3N90A3H

CS3N90A8

CS3N90FA9H

CS3N06AE-G

CS3N06AS-G

CS3N06AS1-G

CS3N20A23H

CS3N20A3H

CS3N20A4H

CS3N20ATH

CS3N25

CS3N30B23H

CS3N40A23

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