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CS3N90A3H1-G - Silicon N-Channel Power MOSFET

Description

performance and enhance the avalanche energy.

Features

  • Fast Switching.
  • Low ON Resistance(Rdson≤5.5Ω).
  • Low Gate Charge (Typical Data:16nC).
  • Low Reverse transfer capacitances(Typical:6.5pF).
  • 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS3N90A3H1-G
Manufacturer CR Micro
File Size 927.93 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS3N90A3H1-G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon N-Channel Power MOSFET ○R CS3N90 A3H1-G General Description： VDSS 900 CS3N90 A3H1-G, the silicon N-channel Enhanced ID 3 VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 75 which reduce the conduction loss, improve switching RDS(ON)Typ 5 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard. Features：  Fast Switching  Low ON Resistance(Rdson≤5.5Ω)  Low Gate Charge (Typical Data:16nC)  Low Reverse transfer capacitances(Typical:6.5pF)  100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier.
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