CS3N50B4HY mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l Low ON Resistance(Rdson≤3.0Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche.
Power switch circuit of electron ballast and adaptor
Absolute（Tc= 25℃otherwise specified Unless）
Symbol Parameter
V.
VDSS
500 V
CS3N50 B4HY, the silicon N-channel Enhanced ID
3A
VDMOSFETs, is obtained by the self-aligned planar Technology
PD (TC=25℃)
35
W
which reduce the conduction loss, improve switching
RDS(ON)Typ
2.4 Ω
performance and enhance the a.
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