CS3N50B3HY
Description
：
VDSS
500 V
CS3N50 B3HY, the silicon N-channel Enhanced ID
3A
VDMOSFETs, is obtained by the self-aligned planar PD (TC=25℃) 35 W
Technology which reduce the conduction loss, improve RDS(ON)Typ
2.4 Ω switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the Ro HS standard.
Features
： l Fast Switching l Low ON Resistance(Rdson≤3.0Ω) l Low Gate Charge (Typical Data:8.5n C) l Low Reverse transfer capacitances(Typical:4.5p F) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of electron ballast and adaptor.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain...
