CS3N50B3HY mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching
l Low ON Resistance(Rdson≤3.0Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanch.
Power switch circuit of electron ballast and adaptor.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
.
VDSS
500 V
CS3N50 B3HY, the silicon N-channel Enhanced ID
3A
VDMOSFETs, is obtained by the self-aligned planar PD (TC=25℃) 35 W
Technology which reduce the conduction loss, improve RDS(ON)Typ
2.4 Ω
switching performance and enhance the avala.
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