CS3N50B3HY Description
： VDSS 500 V CS3N50 B3HY, the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar PD (TC=25℃) 35 W Technology which reduce the conduction loss, improve RDS(ON)Typ 2.4 Ω switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the...