l Fast Switching l Low ON Resistance(Rdson≤3.0Ω) l Low Gate Charge (Typical Data:9.5nC) l Low Reverse transfer capacitances(Typical:3.8pF) l 100% Single Pulse avalanch.

Power switch circuit of electron ballast and adaptor. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter .

VDSS 500 V CS3N50 B4, the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which reduce the conduction loss, improve switching RDS(ON) 2.5 Ω performance and enhance the avala.

CS3N50B3

CS3N50B3HY

CS3N50B4HY

CS3N06AE-G

CS3N06AS-G

CS3N06AS1-G

CS3N20A23H

CS3N20A3H

CS3N20A4H

CS3N20ATH

CS3N25

CS3N30B23H

CS3N40A23

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts