CS1N70A3H-G datasheet, mosfet equivalent, Huajing Microelectronics

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Features and benefits

l Fast Switching l Low ON Resistance(Rdson≤16Ω) l Low Gate Charge (Typical Data:4.1nC) l Low Reverse transfer capacitances(Typical:2.2pF) l 100% Single Pulse avalanche .

Application

Power switch circuit of electron ballast and adaptor. Absolute（Tc= 25℃ unless otherwise specified）： Symbol VDSS ID ID.

Description

VDSS 700 V CS1N70 A3H-G, the silicon N-channel Enhanced ID 0.8 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 25 W which reduce the conduction loss, improve switching RDS(ON)Typ 13 Ω performance and enhance the a.

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