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CS1N50A1 - Silicon N-Channel Power MOSFET

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Part number CS1N50A1
Manufacturer Huajing Microelectronics
File Size 544.43 KB
Description Silicon N-Channel Power MOSFET
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Description

VDSS 500 V CS1N50 A1, the silicon N-channel Enhanced ID 1.0 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 3 W which reduce the conduction loss, improve switching RDS(ON)Typ 9.5 Ω performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-92, which accords with the RoHS standard.

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