CS1N50A1
Overview
： VDSS 500 V CS1N50 A1, the silicon N-channel Enhanced ID 1.0 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 3 W which reduce the conduction loss, improve switching RDS(ON)Typ 9.5 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
